论文
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[1] 赵振宇,陈之战,石旺舟. An investigation of terahertz response in monocrystalline 6H-SiC for electro-optic sampling. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV,2014,53(02):022601-1~022601-6.
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[2] 罗从文,赵振宇,石旺舟,陈之战. An investigation on terahertz response in electro-optic crystals excited at 1.03 μm wavelength. CHINESE SCIENCE BULLETIN,2014,59(11):1187-1191.
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[3] 罗从文,赵振宇,闫爱民,胡志娟,石旺舟,陈之战. 掺镱飞秒脉冲激光激发DAST晶体产生THz谱的可行性研究. 华东师范大学学报.自然科学版,2014,4(4):88~93.
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[4] Yong-Ping Zhang,陈之战,卢吴越,谈嘉惠,程越,石旺舟. Effect of additional silicon on titanium/4H-SiC contacts properties. CHINESE PHYSICS B,2014,23(5):057303.
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[5] Jia-Hui Tan,陈之战,Lu Wuyue,Cheng Yue,He Hong,Liu Yihong,Sun Yujun,Zhao Gaojie. Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching. NANOSCALE RESEARCH LETTERS,2014,9(9):570.
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[6] 陈之战,张永平,卢吴越,程越,谈嘉慧. 锌铬尖晶石水热合成及形成机理研究. 人工晶体学报,2014,43(2):355-360.
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[7] 谈嘉慧,陈之战,张永平,何鸿. n型Si侧蚀的电学机理研究. 功能材料与器件学报,2014,20(1):31-36.
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[8] 张永平,陈之战,程越,卢吴越,谈嘉慧,赵高杰,刘益宏,孙玉俊,石旺舟,李万荣,陆逸枫. 光刻图形转移技术. 上海师范大学学报自然科学版,2014,43(2):132-136.
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[9] 程越,陈之战. Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H–SiC contacts. CHINESE PHYSICS B,2015,24(10):107303.
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[10] 张永平,陈之战. 激光触发能量对横向结构4H-SiC光导开关导通电阻的影响. 强激光与粒子束,2015,27(5):055003.
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[11] 童武林,陈之战. 4H-SiC肖特基二极管载流子输运的温度效应. 上海师范大学学报自然科学版,2015,44(4):430-434.
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[12] Shao-xiong Liu,陈之战. High-Performance of Al Nanoparticle enhanced 4H-SiC MSM Photodiodes for Deep Ultraviolet Detection. IEEE ELECTRON DEVICE LETTERS,2017,38(10):1405-1408.
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[13] Yi-feng Lu,陈之战. Effects of annealing treatment on the high temperature performance of 4H-SiC metal- semiconductor-metal ultraviolet photodiodes. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,71(C):116-120.
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[14] 程越,陈之战,卢吴越,王涛. Fabrication of Ohmic contact on semi-insulating 4H-SiC substrate by laser thermal annealing. JOURNAL OF APPLIED PHYSICS,2016,119(10):225705.
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[15] 刘益宏,陈之战,孙玉俊,赵高杰,廖黎明,王涛. Crystal structure induced residue formation on 4H-SiC by reactive ion etching. AIP ADVANCES,2016,6(06):065219.
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[16] 卢吴越,陈之战. 不同退火方式对Ni/SiC接触界面性质的影响. 物理学报,2015,64(6):067303.
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