| 研究方向： 个人简介： 主要研究方向是射频模拟集成电路及系统，包括频率源、射频毫米波收发机、MEMS电路等。发表SCI/EI期刊及国际会议发表学术论文共40余篇，其中以第一作者/共同第一作者/通信作者身份发表学术论文11篇，包括Science Advances（IF=13.6）、Science Bulletin（IF=18.9）等，授权专利7项。获得上海“超级博士后”激励计划资助，参与多个国家自然科学基金重点项目、重点研发计划等纵向、横向项目。 欢迎对集成电路设计感兴趣的同学联系我
学历： （1）2017-2022年，复旦大学，微电子学与固体电子学，博士 代表性论文成果： [1] Yuting Wang, Liyuan Zhu, Tianxiang Wu*, Shunli Ma*, “A Reconfigurable Digital Beamformer Implemented on a Field-Programmable Gate Array for Real-Time and Resource-Efficient Direction-of-Arrival Estimation,” vol. 25, no. 8, pp. 2497, Apr. 2025. (SCI，中科院三区，影响因子3.5) [2] Siwei Xue#, Shuiyuan Wang#*, Tianxiang Wu#, Ziye Di#, Nuo Xu, Yibo Sun, Chaofan Zeng, Shunli Ma*, Peng Zhou*, “Hybrid neuromorphic hardware with sparing 2D synapse and CMOS neuron for character recognition”, Science Bulletin, vol. 68, no. 20, Sept. 2023. (SCI，中科院一区，影响因子18.9) [3] Shunli Ma#, Tianxiang Wu#, Xinyu Chen#, Yin Wang, Jingyi Ma, Honglei Chen, Antoine Riaud, Jing Wan, Zihan Xu, Lin Chen, Junyan Ren, David Wei Zhang, Peng Zhou*, Yang Chai*, Wenzhong Bao*, “A 619-pixel machine vision enhancement chip based on two-dimensional semiconductors,” Science Advances, vol. 8, no. 31, Aug. 2022. (SCI，中科院一区，影响因子13.6) [4] Tianxiang. Wu, Zhiyuan. Cao, Zhuofan. Xu, Liuyao. Dai, Wei. Mao, Jin. He, Shunli. Ma*, Hao. Yu*, A 130-to-220-GHz Frequency Quadrupler with 80 dB Dynamic Range for 6G Communication in 0.13-μm SiGe Process. Electronics, vol. 11, no. 12, p. 825, Mar. 2022. (SCI，中科院四区，影响因子2.6) [5] Shunli. Ma#, Tianxiang. Wu#, Xinyu. Chen#, Yin. Wang, Hongwei. Tang, Yuting. Yao, Yan. Wang, Ziyang. Zhu, Jianan. Deng, Jing. Wan, Ye. Lu, Zhengzong. Sun, Zihan. Xu, Antoine. Riaud, Chenjian. Wu, David Wei. Zhang, Yang. Chai, Peng. Zhou*, Junyan. Ren*, Wenzhong. Bao*, “An artificial neural network chip based on two-dimensional semiconductor,” Science Bulletin, vol. 67, no. 3, pp. 270-277, 15 Feb. 2022. (SCI，中科院一区，影响因子18.9) [6] Tianxiang. Wu, Xi. Wang, Yong. Chen, Junyan. Ren*, and Shunli. Ma*, “A 10MHz-to-50GHz Low-Jitter Multi-Phase Clock Generator for High-Speed Oscilloscope in 0.15-µm GaAs Technology,” International Journal Of Circuit Theory And Applications (IJCTA)，vol. 50, no. 2, pp. 367-381, Feb. 2022. (SCI，中科院三区，影响因子2.3) [7] Tianxiang. Wu, Jipeng. Wei, Hongquan. Liu, Shunli. Ma*, Yong. Chen, and Junyan. Ren*, “A Sub-6G SP32T Single-Chip Switch with Nanosecond Switching Speed for 5G Applications in 0.25 μm GaAs Technology,” Electronics, vol. 10, no. 12, p. 1482, Jun. 2021. (SCI，中科院四区，影响因子2.6) [8] Tianxiang Wu, Jincheng Zhang, Dong Wei, Lihe Nie, Yuting Yao, Shunli Ma, Junyan Ren*, “A 36–40 GHz VCO with bonding inductors for millimeter wave 5G Communication,” in IEEE International Conference on ASIC(ASICON), Chongqing, China, Oct. 2019, pp. 1-4. (EI) [9] Yiqing. Mao, Tianxiang. Wu*, Yong. Chen, and Shunli. Ma*, “A 0.2-Terahertz Ceramic Relic Detection System Based on Iterative Threshold Filtering Imaging and Neural Network,” Electronics, vol. 10, no. 18, p. 2213, Sep. 2021. (SCI，中科院四区，影响因子2.6) [10] Xiaodi. Feng, Muxi. Zou and Tianxiang. Wu* and Shunli. Ma*, “A High Gain and Wide Bandwidth Dual-Power CMOS Op-amp for High-Speed ADCs Application,” 2023 IEEE 15th International Conference on ASIC (ASICON), Nanjing, China, Oct. 2023, pp. 1-4. (EI) [11] Xun. Cao, Tianxiang. Wu* and Shunli. Ma*, “A 26-39.5 GHz Two-Path Voltage-Combined Power Amplifier with Bandwidth Broadening Technique in 22nm FD-SOI,” in 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), Nangjing, China, Oct. 2022, pp. 1-3. (EI) |
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